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this is information on a product in full production. july 2013 docid15487 rev 8 1/17 SD4933 hf/vhf/uhf rf power n-channel mosfet datasheet - production data figure 1. pin connection features ? improved ruggedness v (br)dss > 200 v ? excellent thermal stability ? 20:1 all phases load mismatch capability ? p out = 300 w min. with 24 db gain @ 30 mhz ? in compliance with the 2002/95/eec european directive description the SD4933 is an n-channel mos field-effect rf power transistor. it is intended for use in 50 v ism applications up to 100 mhz. 1 3 4 2 1. drain 2. source 3. gate 4. source 5. source 5 m177 epoxy sealed table 1. device summary order code marking base qty. package packaging SD4933 SD4933 (1) 25 pcs m177 plastic tray 1. for more details please refer to chapter 9: marking, packing and shipping specifications . www.st.com
contents SD4933 2/17 docid15487 rev 8 contents 1 electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 typical performance (30 mhz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 test circuit (30 mhz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7v gs /g fs sorts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 15 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 docid15487 rev 8 3/17 SD4933 electrical data 17 1 electrical data 1.1 maximum ratings (t case = 25 c) 1.2 thermal data table 2. absolute maximum ratings symbol parameter value unit v (br)dss drain source voltage 200 v v dgr drain-gate voltage (r gs = 1 m )200v v gs gate-source voltage 20 v i d drain current 40 a p diss power dissipation 648 w e as avalanche energy single pulse (i d = 56 a - 800 h coil) 1200 mj t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r thjc junction - case thermal resistance 0.27 c/w electrical characteristics SD4933 4/17 docid15487 rev 8 2 electrical characteristics t case = +25 o c 2.1 static 2.2 dynamic table 4. static symbol test conditions min typ max unit v (br)dss v gs = 0 v i ds = 100 ma 200 240 v i dss v gs = 0 v v ds = 100 v 2 ma i gss v gs = 20 v v ds = 0 v 500 na v gs(q) v ds = 10 v i d = 250 ma 2.5 3.75 v v ds(on) v gs = 10 v i d = 20 a 3.5 4.0 v g fs v ds = 10 v i d = 5 a 10 14 s c iss v gs = 0 v v ds = 50 v f = 1 mhz 1000 pf c oss v gs = 0 v v ds = 50 v f = 1 mhz 400 pf crss v gs = 0 v v ds = 50 v f = 1 mhz 16 pf table 5. dynamic symbol test conditions min typ max unit p out v dd = 50 v i dq = 250 ma f = 30 mhz 300 - w g ps v dd = 50 v i dq = 250 ma p out = 300 w f = 30 mhz 20 24 - db h d v dd = 50 v i dq = 250 ma p out = 300 w f = 30 mhz 50 58 - % load mismatch v dd = 50 v i dq = 250 ma p out = 300 w f = 30 mhz all phase angles 10:1 20:1 - vswr docid15487 rev 8 5/17 SD4933 impedance data 17 3 impedance data figure 2. impedance data table 6. impedance values z in z dl 1.6 - j 5.0 3.3 + j 1.0 = ' / ' 6 = , 1 * 7 \ s l f d o , q s x w , p s h g d q f h 7 \ s l f d o ' u d l q / r d g , p s h g d q f h $ 0 9 typical performance SD4933 6/17 docid15487 rev 8 4 typical performance figure 3. capacitance vs. drain voltage figur e 4. drain current vs. drain-source voltage figure 5. drain current vs. drain-source voltage at different temperatures 0 200 400 600 800 1000 1200 1400 01020304050 capacitance (pf) drain-source voltage (v) cgs cgd cds am09243v1 0 5 10 15 20 25 30 35 02468 ids (a) vds (v) 10 am09244v1 0 5 10 15 20 25 30 35 40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ids (a) vgs (v) 25c 80c -20c am09245v1 docid15487 rev 8 7/17 SD4933 typical performance 17 figure 6. transient thermal impedance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 1.e -04 1.e -03 1.e -02 1.e -01 1.e+00 thermal impedance - zth j-c (c / w) rectangular power pulse width (sec) single pulse 10% 20% 30% 40% 50% 60% single -repetitive pulse am09280v2 typical performance SD4933 8/17 docid15487 rev 8 figure 7. transient th ermal impedance model $ 0 9 & & |